Abstract
Nickel di-silicide layers have attracted scientific interest since the 1990’s as lattice-matched Schottky barriers on silicon and as strong carrier recombination centers when embedded in the silicon. High-resolution electron microscopy and electron beam-induced current are used by Philipp Saring and Michael Seibt (article number 2100142) to show that atomically thin silicide precipitates have properties similar to bulk nickel di-silicide in terms of the Schottky barrier height and electric conductivity. The cover image is an artistic view on processes of recombination and charge collection at thin silicide platelets. Experimental data are shown in front of the silicide’s atomic structure in silicon (image courtesy by L. Kroll).
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