Abstract
Auger, optical, multiphonon and cascade are the main recombination processes known. Carriers can recombine from band to band, or after they have formed an exciton, or after one or both are trapped at an impurity or defect. This paper gives attention to recombination by bound and free excitons, and wide-gap materials are discussed as well as semiconductors, because the recombination mechanisms are often better understood. We treat particularly the competition between radiative and multiphonon process, including that of Dexter, Klick and Russell. It is pointed out that cascade trapping by a charged centre does not always give rise to a large (∼ 10−12cm2) cross section. Exciton lifetime and fluorescence are described. Configuration diagrams are illustrated by the cases of Vk centres and similar behaviour in semiconductors where the valence band is of lone pair type and in insulators such as As2Te3 and SiO2. Recombination in some amorphous semiconductors is contrasted with that in crystals; SiO2 presents some special problems. Finally the effect of magnetic field and an ESR signal is described.
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