Abstract
The behaviour of atomic oxygen, impinging on a tungsten surface can be described by means of two kinetic parameters, the sticking coefficient σ at and the recombinaison coefficient γ. The ratio σ at γ is measured continuously by a flow method. In a second experiment σ at, corresponding to a single impact of the atom upon the surface, is determined. The experimental findings show that atomic oxygen strongly reacts with a tungsten surface. This reactivity has also been observed for semiconductors and even glass, thus demonstrating the importance of the cleanliness of the walls of the vacuum chamber and explaining why former studies of the interaction of molecular oxygen with a hot tungsten surface have led to considerable experimental discrepancies.
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