Recital Investigation of Heterojunction Thin Film Gallium Nitride/Polysilion Solar Cell and its Optimization

Abstract

Conversion of solar energy into electricity by a solar cell substantively depend on properties of materials and design of solar cell. Heterojunction solar cells are gaining attention due to their high efficiencies. For the very purpose, a heterojunction thin film Gallium Nitride/polysilicon solar cell is simulated and optimized in Silvaco Atlas, which is a two dimensional device design simulation software. The intrinsic layer of solar cell is probed to enhance the efficiency of solar cell. Electrical and optical characteristics of solar cells are investigated by changing the thickness of intrinsic layer. The investigation is based on model parameters such as bandgap energy, material thickness and doping concentration of solar cell. Intrinsic layer is varied to obtain the maximum possible output from the proposed Gallium Nitride/polysilicon solar cell.The optical losses such as ultraviolet light immersion by transparent conductive oxide (TCO) layer is minimized by optimizing the thickness of TCO. The conversion efficiency of as high as 26.67% can be obtained by optimizing model parameters. Open circuit voltage Voc of 0.789V, short circuit density Jsc of 52.66 mA/cm2, Fill factor of 73.9% is achieved by a small area of 14.8 μm2. The result of simulation suggest that proposed Gallium Nitride/polysilicon solar cell will prove to be a potential candidate for high performance and higher efficiency applications of photovoltaic.