Abstract
We examine high quality, single crystal CdTe epilayer grown by molecular beam epitaxy (MBE) on ()B GaAs substrate using both positions and full width at half maximums (FWHMs) of reciprocal lattice points (RLPs). Our results demonstrate that reciprocal space mapping (RSM) is an effective way to study the structural characteristics of the high-index oriented epitaxial thin films having a large lattice mismatch with the substrate. The measurement method is defined first, and then the influence of shear strain () on the position of the () node of epilayer is clarified. It is concluded that the lattice tilting is likely to be related with the lattice mismatch. Nondestructive measurement of the dislocation density is achieved by applying the mosaic crystal model. The screw dislocation density, estimated to be cm−2, was calculated utilizing the broadened peakwidths of the asymmetric RLP of the epilayer lattice.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
