Abstract
High-resolution X-ray diffraction (HRXRD) and triple-axis diffractometry (TAD) are used to investigate Si1−x C x epilayers and Si n /C/Si n superlattices. The samples were annealed in several steps to obtain information about their thermal stability. During annealing defects are formed in the epitaxial layers as well as in the substrates, leading to a contribution of diffusely scattered intensity around the particular reciprocal lattice points. A comparison of the measured intensity distribution in reciprocal space with model calculations based on a theory by Krivoglaz shows that the defects in the layers are different from those in the substrates, and that the assumption of small spherical defects in the epilayers leads to a quite good agreement between measurement and simulation. The comparison of different samples also shows that the formation of the defects depends on the particular sample structure.
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