Abstract
The previously observed unusual dependences of the thermoelectric and thermomagnetic coefficients of strongly doped HgFeSe crystals on temperature and magnetic field intensity are studied theoretically. It is shown that the observed dependences are due to the combined effect of electron scattering by spatially correlated charged donors Fe(3+) at low temperatures and the reciprocal drag of electrons and phonons, which plays a large role in semiconductors with a high density of itinerant charge carriers.
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