Recessed gate GaN field effect transistor

Abstract

A n + n GaN metal semiconductor field effect transistor was fabricated, with the gate recess formed by Electron Cyclotron Resonance BCl 3N 2 dry etching. The drain source breakdown voltage is > 20 V, and annealing at 400°C was found to be necessary after the dry etch step to produce a high gate breakdown voltage (∼ 25 V).