Abstract
Multiple patterning lithography has been recognized as one of the most promising solutions, in addition to extreme ultraviolet lithography, directed self-assembly, nanoimprint lithography, and electron beam lithography, for advancing the resolution limit of conventional optical lithography. In multiple patterning lithography, an original design layout is divided into multiple masks, and through a series of exposure/etching steps, the layout can be produced. Multiple patterning layout decomposition becomes more challenging as advanced technology introduces complex coloring rules and considers density balancing. In this paper, we first review recent research progress in multiple patterning layout decomposition from modeling to solution perspectives. Then, we discuss how challenges were handled by state-of-the art works. Finally, future research directions are identified.
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