Recent progresses of STT memory design and applications

Abstract

Spin-transfer torque (STT) memory is a promising new memory technology that aims replacing SRAM and DRAM in embedded and stand-alone applications. The data is normally stored in a magnetic device, e.g., magnetic tunnelling junction (MTJ), and represented by its resistance state. During write operations, electrical current and/or magnetic field are applied to program the device to the target resistance state. In this work, we gives a short survey on the recent progress of new STT device development and circuit implementations for memory applications, as well as the relevant design methodologies.