Abstract
Summary form only given. Progress in the development of GaAs- and InP-based microwave and millimeter-wave device, circuit, and component technologies was reviewed. The state of the art in MESFET, HBT (heterojunction bipolar transistor), and HEMT (high electron mobility transistor) device technologies for applications in both low-noise amplification and high-efficiency power generation was examined. The development of monolithic integrated circuits for high-performance transmit/receive module, broadband receiver, and low-cost sensor applications was summarized and highlighted with circuit examples of single- and multiple-function MMICs (monolithic microwave integrated circuits). Progress in the development of advanced components based on the integration of these MMICs was also presented. Package design criteria for complex multichip components were discussed in terms of RF performance, size, weight, thermal conductivity, and cost constraints.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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