Recent progress of resistive switching random access memory (RRAM)

Abstract

This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.