Abstract
We review the recent progress of nitride-based light-emitting diodes (LEDs) and discuss the relation between dislocation density and quantum efficiency. We also discuss how to improve the external quantum efficiency of nitride-based LEDs. Secondly, the group-III nitride laser diodes (LDs), which emit from near-ultraviolet to pure-blue, are reviewed. Reducing threading dislocations can increase the lifetime of nitride LDs. Using the epitaxial lateral overgrowth technique, a dislocations density of the order of 105 cm−2 has been obtained. The relation between the lifetime of nitride LDs and the density of dislocations is discussed. Finally, near-ultraviolet LDs and pure-blue LDs are described. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.