Recent progress of Cat-CVD research in Japan—bridging between the first and second Cat-CVD conferences

Abstract

We review the recent progress of Cat-CVD research in Japan since the 1st Cat-CVD conference in Kanazawa in 2000. Some groups, including ours, succeeded in realizing large-area deposition of amorphous silicon (a-Si) of approximately 1 m size, and thin film transistors (TFTs) with a mobility over several 10s of cm 2 V −1 s −1 are fabricated using Cat-CVD polycrystalline silicon (poly-Si) films. Extensive studies of in situ cleaning methods revealed that a high rate of chamber cleaning is possible in Cat-CVD systems. Solar cell research is now carried out within the New Energy and Industrial Technology Development Organization (NEDO) project, and the study of Cat-CVD Si 3N 4 films prepared at lower than 100 °C is now a Japan Science and Technology Corporation (JST) project to use them as coatings on organic devices. The feasibility of Cat-CVD for various applications has been widely demonstrated, along with further understanding of the fundamental mechanism of the Cat-CVD process.