Abstract
With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe2 exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T′ and vice versa, owing to the extremely small energy barrier between these two phases. MoTe2 thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe2 hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe2, demonstrate the approaches to the construction of 2D MoTe2 hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.
Highlights
Over the past few years, the complexity of integrated circuits (IC) in the semiconductor industry has increased with the decrease in the size of components [1,2]
We summarized the recent progress in 2D MoTe2 hetero-phase homojunctions
We first briefly introduced the properties of three phases of MoTe2, namely the 2H, 1T0, and Td phases, and illustrated two strategies, direct synthesis and postprocessing, to construct 2D MoTe2 hetero-phase homojunctions
Summary
Over the past few years, the complexity of integrated circuits (IC) in the semiconductor industry has increased with the decrease in the size of components [1,2]. Traditional silicon-based transistors have been confronted with fundamental limits induced by quantum mechanics and thermodynamics at the nanometer scale [3], thereby leading to several problems, such as the short-channel effect [4,5] and severe carrier scattering by surface dangling bonds [6,7], which would degrade the device performance and hinder the scaling To solve these problems, low-dimensional electronic materials including transition metal dichalcogenides (TMDs) have been intensively studied due to their prominent advantages, including atomically thin thickness without dangling bonds, diversity of bandgaps, and excellent performance that is superior to their silicon counterparts [8]. With careful selection of the appropriate materials, the SBH between the hetero-phases is expected to be ultralow if the interface is covalently bonded and atomically coherent [16]. 2. (a) Atomic models of 2H‐, Td‐, and Figure 1
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