Abstract
The authors report on advanced metalorganic chemical vapour deposition (MOCVD) of Hg1−xCdxTe (HgCdTe) structures for high operating temperature, medium wavelength infrared (MWIR) detector application. MOCVD technology with wide range of composition and donor/acceptor doping and without post grown annealing was proved to be an excellent tool for HgCdTe heterostructure epitaxial growth used for uncooled photodetector design. The interdiffused multilayer process (IMP) technique was applied for the HgCdTe deposition. HgCdTe epilayers were grown at 350°C with Hg source kept at 210°C. The II/VI mole ratio was assumed in the range from 1.5 to 3 during CdTe/HgTe cycles of the IMP process.The MWIR detectors grown by MOCVD exhibit detectivity ∼7.3×1011Jones at λPEAK=3.5μm and T=230K being determined by background limited photodetector (BLIP) condition.
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