Abstract
Recent developments in high resolution depth profile analysis of thin film systems and interfaces are discussed in particular with respect to the minimization of sputter induced degradation of depth resolution. The development of interfering surface topography during the sputter removal can be significantly reduced by sample rotation. With this technique absolute depth resolution of a few nm being independent from the sputtered depth has been achieved for AES sputter depth profiling of Ni-Cr-sandwich systems. Extremely high depth resolution is established by low energy SNMS for ion bombarding energies in the 10 2 eV regime. Then very narrow structures of multilayer systems like W-Si with a periodicity of only 3–4 nm can be resolved with constant depth resolution across a total layer thickness of 250 nm.
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