Abstract
In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of High Speed Electronics and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
