Abstract
Recent progress in epitaxial growth of SiC in the author’s group is surveyed. Growth of 3C-SiC on a Si substrate, a typical success in heteroepitaxial growth with large lattice mismatch, is briefly reviewed. Step-controlled epitaxy of α-SiC, which the author’s group named and is a key technology for future development, is discussed in detail. Growth mechanism and effects of off-direction and off-angle are described. As an advanced epitaxial growth, atomic level control in SiC crystal growth by gas source MBE is given.
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