Abstract
As a kind of specially modified chemical vapor deposition (CVD), atomic layer deposition (ALD) has long been used to fabricate thin films. The self-limiting reaction of ALD endows the films with excellent uniformity and precise controllability. The thickness of the films obtained by ALD can be controlled in an atomic scale (0.1 nm) on a large-area substrate even with complex structures. Therefore, it has recently been employed to produce the two-dimensional (2D) materials like MoS2. In this mini-review, the research progress in ALD MoS2 is firstly summarized. Then the influences of precursors, substrates, temperature, and post-annealing treatment on the quality of ALD-MoS2 are presented. Moreover, the applications of the obtained MoS2 as an electrochemical catalysator are also described. Besides the perspective on the research of ALD of MoS2, the remaining challenges and promising potentials are also pointed out.
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