Abstract
Silicon dominates the contemporary electronic industry. However, being an indirect band-gap material, it is a poor ab-sorber of light, which decreases the efficiency of Si-based photodetectors and photovoltaic devices. This review high-lights recent studies performed towards improving the optical absorption of Si. A summary of recent theoretical ap-proaches based on the first principle calculation has been provided. It is followed by an overview of recent experimental approaches including scattering, plasmon, hot electron, and near-field effects. The article concludes with a perspective on the future research direction of Si-based photodetectors and photovoltaic devices.
Highlights
Si is an integral part of all electronic devices
This review presents an overview of various theoretical and experimental efforts to improve the performance of Si-based photodetectors and photovoltaic devices
The theoretical framework based on first principle calculations along with experiments including scattering effect, plasmon effect, hot electrons, and near-field effect were discussed
Summary
Si is an integral part of all electronic devices. It plays an important role in opto-electronic devices such as photodetectors and photovoltaic devices[1,2]. Si is an indirect band-gap semiconductor and exhibits poor optical absorption efficiency. This review presents an overview of various theoretical and experimental efforts to improve the performance of Si-based photodetectors and photovoltaic devices.
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