Abstract

Silicon dominates the contemporary electronic industry. However, being an indirect band-gap material, it is a poor ab-sorber of light, which decreases the efficiency of Si-based photodetectors and photovoltaic devices. This review high-lights recent studies performed towards improving the optical absorption of Si. A summary of recent theoretical ap-proaches based on the first principle calculation has been provided. It is followed by an overview of recent experimental approaches including scattering, plasmon, hot electron, and near-field effects. The article concludes with a perspective on the future research direction of Si-based photodetectors and photovoltaic devices.

Highlights

  • Si is an integral part of all electronic devices

  • This review presents an overview of various theoretical and experimental efforts to improve the performance of Si-based photodetectors and photovoltaic devices

  • The theoretical framework based on first principle calculations along with experiments including scattering effect, plasmon effect, hot electrons, and near-field effect were discussed

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Summary

Introduction

Si is an integral part of all electronic devices. It plays an important role in opto-electronic devices such as photodetectors and photovoltaic devices[1,2]. Si is an indirect band-gap semiconductor and exhibits poor optical absorption efficiency. This review presents an overview of various theoretical and experimental efforts to improve the performance of Si-based photodetectors and photovoltaic devices.

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