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Abstract
This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device.
Highlights
Applications of complementary metal oxide semiconductor (CMOS) image sensors have greatly expanded since their introduction, charge-coupled device (CCD) image sensors are still used for their excellent image uniformity, and high global-shutter efficiency (GSE).For capturing quality images in low light, high quantum efficiency and low noise are key attributes for both types of sensors
More specific to CCDs, electron multiplication CCD (EMCCD) image sensors were conceived as a way to significantly reduce noise [1]
Recent process changes to improve the performance of our EMCCD devices have been
Summary
Applications of complementary metal oxide semiconductor (CMOS) image sensors have greatly expanded since their introduction, charge-coupled device (CCD) image sensors are still used for their excellent image uniformity (i.e., low fixed pattern noise), and high global-shutter efficiency (GSE). For capturing quality images in low light, high quantum efficiency and low noise are key attributes for both types of sensors. More specific to CCDs, electron multiplication CCD (EMCCD) image sensors were conceived as a way to significantly reduce noise [1]. With an EMCCD, care needed to be taken to ensure that gain was only applied under low-lighting conditions to avoid saturating the device. This put a limit on the intra-scene dynamic range. With two multiplication phases per pixel for a total of 1800 gain stages
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