Abstract
GaN nanorods and related high aspect ratio 3D GaN nanostructures recently attracted a lot of attention since they are expected to be an exciting new route towards extending the freedom for device design in GaN technology. Such structures offer large surfaces, defect free high quality material, as well as non-polar surface orientations, including the possibility to use very large area foreign substrates without implementing large area strain. All of these aspects are difficult or impossible to achieve when planar substrate approaches are used. Meanwhile, such 3D high aspect ratio GaN based nanostructures can reproducibly be fabricated with high aspect ratios and good homogeneity, and more and more device and application aspects are under investigation.
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