Abstract
This paper provides a brief review of recent work on strained layer GexSi1−x including modeling of critical thicknesses for single layers and superlattices; calculations and measurements on strain induced alteration of alloy band gap and heterostructure band alignment; and application to modulation-doped field effect transistors (MODFET) and 1.3 μm photodetector devices.
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More From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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