Abstract
We review the recent developments of GaInP/GaAs heterojunction bipolar transistors (HBTs) used for microwave power, low noise, linear amplification and high temperature applications. Special attention is paid in the comparison of the GaInP HBT results with the more conventional AlGaAs HBTs. The material and processing advantages, as well as the electronic and thermal properties of GaInP are described.
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Schedule a callMore From: International Journal of High Speed Electronics and Systems
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