Abstract
Ternary copper tin sulphide, Cu2SnS3 (CTS) is prominent material of semiconductor industry due to p-type semiconducting, sufficient band gap, high mobility, high carrier concentration, and polymorphic crystal structure. CTS material can be synthesized as single crystals, thin films, nanoparticles and quantum dots. This review covers chemical bath deposition, sputtering, spin coating, spray pyrolysis, evaporation and pulsed laser deposition as fabrication techniques to design CTS thin films. Key studies highlighting the effects of precursors, pH, temperature, time of deposition, and sulfurization conditions on properties of CTS thin films are discussed. Enhancing the electrochemical, thermal, optical and physical properties of CTS thin films by doping antimony, silver, and cadmium are also explained. The timeline development along with main advantages and limitations of CTS thin films fabricated by chemical/physical routes are critically discussed. Recent advances in modifying characteristics of CTS thin films by adopting different strategies offer a wider range of photovoltaic applications.
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