Abstract
This paper reviews recent progress of temperature compensated surface acoustic wave (SAW) devices for wireless communications. First, temperature compensation techniques based on the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> deposition and the wafer bonding are explained, and their implementation into real devices are discussed. Finally, we will show how high performances have been realized by the use of these technologies.
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