Recent Challenges and the Future of Metal Oxide Resistive Switching Devices

Abstract

Resistive switching (RS) memories have been a crucial component for the requirements of the Internet of Things (IoT) which demands ultra-low power and high-density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (PVD and CVD) which are quite expensive due to their up-scale production. Solution-processing methods have been improved, being now a reliable technology that offers many advantages for RS devices such as, high versatility, large area uniformity, transparency, low-cost and a simple fabrication of two-terminal structures. Solution-based metal oxide RS devices are emergent and promising non-volatile memories for future electronics. In this work, we review the present status of solution-based metal oxide RS devices is highlighted as well as discuss the solution synthesis parameters which induce a massive influence on the overall performance of these devices.[1] Next, a precise analysis of the most reported transition metal oxide thin films and electrode interface is presented. Then the recent advances on RS devices that will allow the massive production and compatibility with flexible substrates targeting low cost for neuromorphic and memory applications are discussed. Finally, the main challenges in solution-based metal oxide RS devices are discussed and future trends are proposed.