Abstract
It has been recognized during the last few years that thin films of amorphous silicon (a-Si) prepared by the glow discharge technique possess considerable applied potential. In this paper we shall review present device developments under two main headings. The first is concerned with the a-Si field effect transistor and its application in addressable liquid crystal display panels. Recent exploratory work on basic integrated logic circuits and photosensing elements will also be discussed. The second part of the paper is concerned with the doping of a-Si which has opened up the possibility of thin film junction devices. Work on high current diodes, Vidicon targets and photoreceptors for electrophotography will be reviewed, as well as some recent developments in the field of a-Si p-i-n photovoltaic junctions for solar energy conversion.
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