Abstract
The main advantage of secondary neutral mass spectrometry SNMS compared to its sister method SIMS is its high quantificability in consequence of the separation of the emission and the ionization process of the analyzed particles. Electron gas SNMS using electron impact postionization by the electron component of a resonantly excited low pressure high frequency plasma is at present the most developed analytical technique of this type. The characteristic properties and the potentialities of SNMS are demonstrated by comparative SNMS-SIMS measurements, and for the analysis of homogeneous multielement samples. Detection sensitivities down to 100 ppb are obtained with SNMS in such cases. The direct bombardment mode of SNMS is applied to depth profile analysis of a Ta-Si multilayer system. For bombarding energies in the order of 10 2 eV a depth resolution down to the fundamental limits set by the low energy ion-surface interaction itself becomes possible.
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