Abstract
Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.
Highlights
Today, there is a growing demand for flat-panel displays with higher resolution, larger screen sizes, better viewing, and lower power consumption, pushing traditional amorphous silicon thin-film transistor (TFT) technology to its limits [1,2,3]
A notable strategy has been recently developed to enhance the electrical performance of solution-derived oxide TFTs by utilizing heterojunction channels [26]
Oxide TFTs reviewing Heterojunction solution-processed heterojunction oxide TFTs, we would like to make a short introduction on vacuum-based heterojunction oxide devices
Summary
There is a growing demand for flat-panel displays with higher resolution, larger screen sizes, better viewing, and lower power consumption, pushing traditional amorphous silicon thin-film transistor (TFT) technology to its limits [1,2,3]. Commercial metal oxides are grown via physical vapor deposition technologies, but solution-based approaches have been attracting particular attention recently [5,8,9,10,11]. Ways to reduce defect states and improve electrical performance and stability are an urgent challenge for solution-based metal oxide TFTs [16,17]. A notable strategy has been recently developed to enhance the electrical performance of solution-derived oxide TFTs by utilizing heterojunction channels [26]. This review, we summarize the heterointerface can greatly improve device mobility In this we summarize the recent recent progress of solution-processed heterostructure oxide. Development [34,35,36]
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