Recent advances in wide-spectrum photodetectors based on low-dimensional semiconductors

Abstract

Compared with three-dimensional semiconductors, low-dimensional (LD) semiconductors have unique atomic arrangements and excellent optical and electrical characteristics, such as high absorptivity, mechanical flexibility, and absence of dangling bonds on the surface. With these advantages, LD semiconductors are considered as a kind of promising materials in the field of photodetection. However, the applications of LD materials are limited by their dimensional constraint, large dark current, high noise, low quantum efficiency, slow response speed, and other characteristics. In this paper, the recent advances in wide-spectrum photodetectors in the ultraviolet to infrared spectrum are reviewed. The working mechanisms and performance parameters of photodetectors are described. Specific research examples based on wide-spectrum photodetectors are reviewed based on three aspects, namely the structure of photodetectors, their response mechanisms, and important performance indicators. Furthermore, the challenges in improving the performance of wide-spectrum photodetectors are discussed, along with the prospective development trends of wide-spectrum photodetectors.