Abstract
Gallium nitride (GaN) HEMT has board application prospect for 5G wireless communication systems. This paper reviews the recent advance in space mapping technique for GaN HEMT modeling technique. A novel decomposed-based space mapping technique is discussed. This method is a systematic modeling approach with fast developing speed. A 2×350 µm GaN HEMT device are used as an example.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have