Abstract
AbstractThe development of semiconductor photocatalysts is of great significance for the realization of efficient photocatalytic hydrogen evolution (PHE). AgIn5S8, as an emerging ternary metal sulfide photocatalyst, possesses the advantages of suitable bandgap (1.7–2.0 eV), environment‐friendly elements, and strong photostability, which holds great potential to realize high‐efficiency PHE. Although AgIn5S8‐based photocatalysts have achieved promising research progresses, their PHE performances are still far below the level of commercial applications. In this review, the basic semiconductor properties of AgIn5S8 and PHE mechanism are first introduced in detail. Subsequently, the development process and PHE activities of AgIn5S8‐based photocatalysts are systematically summarized, mainly including morphology control, Schottky junction formation through cocatalyst loading, and construction of different types of heterojunctions. Finally, the current issues and the possible solutions of AgIn5S8‐based photocatalysts in future studies are presented.
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