Abstract
Atomic layer deposition (ALD) is an emerging vapor-phase thin-film deposition technique, and it has been widely used in microelectronics, energy, optics, and catalysis. Studying and understanding the physicochemical mechanisms involved in the ALD processes are essential to grow high-quality films and for their applications. As a surface-sensitive techinique, photoelectron spectroscopy (PES) is capable of in situ monitoring the surface chemistries during ALD, which provides the essential information for the mechanism investigation and process development of ALD. This review is organized to first introduce the working principles and instrumentation of coupling ALD with in situ PES for studying the ALD mechanisms, and then describes in detail the recent research advances in using the in situ PES technique to study the surface chemistry reactions during the film growth, the substrate effects during the intital growth, the modes of film growth, the surface thermolysis of the precursors and the effects thereof, and the band structures at the interfaces. Finally, the perspectives on the future directions of the ALD mechanism studies by PES are onlined.
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