Abstract
Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.
Highlights
Doping is the most common and feasible method used to control the properties of conventional semiconductors
We have provided an overview of important recent researches on doping strategies covering substitutional, chemical and molecular methods for graphene and advanced two-dimensional semiconducting materials
There is a continuous demand for the development of doping techniques for these two-dimensional semiconducting materials that can improve device performance by precisely controlling the carrier concentration
Summary
Doping is the most common and feasible method used to control the properties of conventional semiconductors. Organic compounds are widely available in natural and synthetic forms; they mostly consist of polymers that are repeated units of monomers. These organic compounds are viable candidates for inducing the required modulations in. Most recent studies have focused on silane-based SAMs. The dipole moments of end-functional groups in SAMs are normally responsible for inducing n- or p-type doping effects in 2D materials. Many organic molecules, such as monoethanolamine (MEA), benzyl viologen (BV), and SAM-thiol, have shown good stability of doping after a few days owing to their hydrophilic nature [6,7]. Organic-molecular-based doping techniques enable enhancement and modulation of the electrical, optical, mechanical, and flexible properties of 2D material-based devices. We have compiled some recent studies that have utilized organic molecules as dopants for 2D materials, with a particular interest in graphene and transition metal dichalcogenides (TMDs) by which numerous device applications have been reported
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
