Abstract
High-power multimesa GaAs hybrid double-drift IMPATT's have been developed for pulsed operation at X-band. The diodes are fabricated from GaAs material grown by a novel infinite solution liquid phase epitaxial process. The use of specialized rapid thermal processing and packaging techniques has enabled the fabrication of high-power IMPATT oscillators that have delivered peak output powers of over 40 W with 20-percent efficiency under pulsed RF operation at X-band frequencies. The diodes are constructed with an integral heat sink and bounded with a Au-Sn eutectic solder in a microwave package.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
