Abstract
Vertical-cavity surface-emitting lasers (VCSELs) have made remarkable progress, are being used across a wide range of consumer electronic applications, and have particularly received much attention from the telecom and datacom industries. However, several constraints are thus currently being tackled to improve the device characteristics and modulation formats to meet the various demanding requirements of the future 800 GbE and 1.6 TbE Ethernet standards. This manuscript discusses the device characteristics and the key considerations in the device designs and optimizations. Finally, we elucidate the latest developments and vital features of modern 850 nm VCSELs for high-speed interconnects.
Highlights
Vertical-cavity surface-emitting lasers (VCSELs) have shown their capabilities in cryogenic environments and have been operated up to 40 and 50 GHz, as reported by Cheng et al and Feng’s group at the University of Illinois Urbana-Champaign (UIUC) in 2020 and 2021, respectively [40,41]
After 44 years of development, remarkable progress has been made on the development of VCSELs, and many researchers have demonstrated ultra-fast VCSELs with modulation bandwidths of up to 30 GHz [22,61,62,63,64,65,116]
We summarized a historical review of modern high-speed 850 nm VCSELs and the key considerations for future next-generation VCSELs
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. The incorporation of distributed Bragg reflector (DBR) mirrors and miniature microcavity designs [4,5] reduces the threshold gain and provides inherent mode selectivity. These approaches make VCSELs have very low thresholds (
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