Abstract
Total reflection X-ray fluorescence (TXRF) using Synchrotron Radiation is likely to be the most powerful non-destructive technique for the analysis of trace metal impurities on silicon wafer surfaces. Of fundamental importance in TXRF is the achievable sensitivity as characterized by the minimum detection limit. This work describes the progress we achieved recently at the Stanford Synchrotron Radiation Laboratory (SSRL) in minimum detection limits for transition metals and will give an estimate of what can be achieved using a third generation synchrotron radiation source such as SPEAR3.
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