Abstract
Temperature coefficient (TC) is a critical operational parameter for solar modules. Amorphous/crystalline silicon heterojunction (SHJ) solar cell is usually considered as a good choice for installation in hot climates because of its lowest TC amongst silicon solar cells. Recently, we have found that light soaking can activate efficient boron doping in hydrogenated amorphous silicon (a-Si:H), which improves the efficiency of SHJ solar cells by enhanced field effect passivation and declined series resistance. In this study, we further report that high temperature can boost this light-induced doping effect. This implies that SHJ solar cells can generate more electricity than estimated by indoor International Electrotechnical Commission (IEC) standards in light abundant locations with hot climates. As a consequence, a 100 MW solar plant comprising SHJ solar modules will gain an extra income of more than 2 million U.S. dollars in a 25-year operation period. Additionally, for the first time, we demonstrate that the dark conductance of phosphorus-doped a-Si:H (n-a-Si:H) increases more greatly than that of boron-doped a-Si:H (p-a-Si:H) after one-sun illumination. This finding has an important implication for bifacial solar modules.
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