Abstract
An improved large-angle convergent beam electron diffraction (LACBED) experiment method using a Philips CM12 electron microscope is discussed. Dislocations in silicon parallel to the Bragg lines have been studied by this improved LACBED technique. Images of dislocations of reasonably good spatial resolution superimposed on LACBED patterns have been obtained. It has been found that only when the image of the dislocation is parallel and close to the low-order contour with g · b ≠ 0 can it be formed with reasonably good contrast in the LACBED patterns. Both the image of the dislocation and the changes of the contours can be visible in a single LACBED pattern, making it a convenient technique for studying the strain field of a dislocation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
