Abstract
During in situ scanning tunneling microscopy (STM) observations of quenched Si(111) surfaces at a temperature around 400–500°C, the structure with the adatom arrangement which is not coincident with the normal dimer–adatom–stacking fault (DAS) structure was often observed. The flipping between this structure and the normal DAS stacking fault (SF) half unit frequently occurred. From the adatom arrangement and the strong preference of the adatoms for the sites adjacent to the dimers, it has been concluded that the dimers in the DAS structures are rearranged frequently during the flipping.
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