Abstract

We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ~870 nm to 930 nm and results in >2 mA/cm2 collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m2.

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