Abstract
GaAs surface cleaning using atomic hydrogen (H·) prior to molecular beam epitaxy has been compared to the conventional thermal treatment of GaAs surfaces. The surface morphology was observed in real time using in situ scanning microprobe reflection high-energy electron diffraction (μ-RHEED). GaAs surfaces have been found to be uniformly cleaned at temperatures of about 400°C using the H· treatment. On the other hand, a local initiation of the desorption of the oxide layer has been observed during the conventional thermal treatment at about 580°C.
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