Abstract
Various optical diagnostics are being developed or refined to meet the challenges of semiconductor epitaxy. New data‐reduction algorithms allow near‐surface alloy compositions and interface properties to be obtained by kinetic ellipsometry (KE) with no knowledge of the underlying sample structure, providing a path to sample‐driven, closed‐loop feedback control. New information about growth and growth mechanisms is being obtained by surface‐oriented probes such as laser light scattering (LLS), surface photoabsorption (SPA), and reflectance‐difference spectroscopy (RDS). Examples are provided and likely directions of further progress discussed.
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