Abstract
The use of ellipsometry in connection with vapor-phase epitaxy or plasma processing of semiconductors is reviewed. It is shown that the availability of this surface-sensitive, non-destructive real-time method is a unique facility not only to monitor the kinetics of thin films deposition, but also to analyse the interface regions between distinct successive layers. In the case of rough interfaces, real-time ellipsometry is the only possible technique for detecting three-dimensional growth (a-Si nuclei on Si 3N 4, Ga droplets on GaAs MBE layers). For more complex structures (for instance in the case when more than one layer changes at a time during the process), a complementary method is shown to be variable-energy and variable-angle-of-incidence ellipsometry. The possibilities and limitations of this spectroscopic ellipsometer are discussed on oxide/GaAs, SiO 2/Si, as well as hypothetical interfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
