Abstract
The use of ellipsometry in connection with vapor-phase epitaxy or plasma processing of semiconductors is reviewed. It is shown that the availability of this surface-sensitive, non-destructive real-time method is a unique facility not only to monitor the kinetics of thin films deposition, but also to analyse the interface regions between distinct successive layers. In the case of rough interfaces, real-time ellipsometry is the only possible technique for detecting three-dimensional growth (a-Si nuclei on Si 3N 4, Ga droplets on GaAs MBE layers). For more complex structures (for instance in the case when more than one layer changes at a time during the process), a complementary method is shown to be variable-energy and variable-angle-of-incidence ellipsometry. The possibilities and limitations of this spectroscopic ellipsometer are discussed on oxide/GaAs, SiO 2/Si, as well as hypothetical interfaces.
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