Abstract
This article attempts to realize ultralow lattice thermal conductivity in Cu3SbSe4 by substitution Sb site by IIIB elements (Sc/Y), the facial microwave reaction were chosen to fabricate the above samples. The results show that group IIIB elements combined with multiscale heterostructure can effectively suppress the lattice thermal conductivity in Cu3SbSe4 system, resulting in a typical low value of 0.491 W/m/K and 0.481 W/m/K in Cu3Sb0.92Sc0.08Se4 and Cu3Sb0.92Y0.08Se4 at 623 K, respectively. Eventually, a peaking zT value of 0.47 and 0.46 can be obtained for each doping sample. This research highlights a novel strategy by co-constructing multiscale heterostructure and IIIB elements doping for realizing multiscale phonon scattering in Cu3SbSe4 materials.
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