Abstract
Substantial progress has been made in the experimental synthesis of large-area two-dimensional transition metal dichalcogenide (TMD) thin films in recent years. This has provided a solid basis to build non-planar structures to implement the unique electrical and mechanical properties of TMDs in various nanoelectronic and mechano-electric devices, which, however, has not yet been fully explored. In this work, we demonstrate the fabrication and characterization of MoS2 field-effect transistors (FETs) with an omega (Ω)-shaped gate. The FET is built based on the SiO2/MoS2 core-shell heterostructure integrated using atomic layer deposition (ALD) technique. The MoS2 thin film has been uniformly deposited by ALD as wrapping the SiO2 nanowire forming the channel region, which is further surrounded by the gate dielectric and the Ω-gate. The device has exhibited n-type behavior with effective switching comparable to the reference device with a planar MoS2 channel built on a SiO2/Si substrate. Our work opens up an attractive avenue to realize novel device structures utilizing synthetic TMDs, thereby broadening their potential application in future advanced nanoelectronics.
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