Abstract

This PhD Thesis is focused on the realization of superconducting quantum devices based on overdamped Nb/Al-AlOx/Nb SNIS (Superconductor - Normal metal - Insulator - Superconductor) tunneling Josephson junctions, interesting for several application fields (voltage metrology, digital electronics, radiation sensors, nanoSQUID, etc.). The challenges faced by quantum electronics and metrology are directing the new generations of devices towards smaller dimensions and higher levels of integration. Taking into account this requirement, the fabrication of SNIS-based devices has been addressed on downscaling the junction dimensions form the micro to the nanoscale. In particular, the effective area of junctions has been reduced exploiting three different lithographic techniques: the optical lithography to realize SNISs for a micrometer resolution, the Electron Beam Lithography (EBL) at the subµm and, finally, the Focused Ion Beam (FIB) sculpting method to achieve nanometer sizes. Specifically, prototypes have been realized exploiting the thin film technology, to guarantee a good control of electrical parameters of junctions, a higher reproducibility of their current-voltage I-V characteristics, and an accurate dimension control. Reliable and simpler fabrication processes have been implemented and validated, and the device downscaling was pursued without affecting the fundamental properties of SNIS junctions such as the non hysteretic I-V response and the skill on generating quantised voltage steps under radiofrequency irradiation. This work has thereby led to the definition and validation of a new generation of devices and processes down to the nanometer scale, and these approaches represent precious experiences of nanofabrication valuable for new research activities and projects

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