Abstract
The optoelectronic integrated transmitter and receiver for 650nm plastic optical fiber (POF) communication applications realized in 0.5μm BCD (Biplor, CMOS and DMOS) process is first described in this paper. The 650nm resonant cavity light emitting diode (RCLED) is used as light source. It is first proposed for optoelectronic integration of the transmitter by bonding RCLED to the driver chip. Temperature compensation technology is employed in the driver circuit to compensate for the modulation current. In the monolithic optoelectronic integrated receiver, large area multi-finger PIN photodetector (PD) that is compatible with standard IC process, transimpedance amplifier and post amplifier are presented. Measurement results show that the responsivity and capacitance of PD is 0.25A/W and 5pF, respectively. The sensitivity of receiver is −14.6dBm at 180Mb/s and BER is less than 10−9 for 650nm input light by POF. A clear eye diagram is demonstrated for 180Mb/s PRBS. These indicate that optoelectronic integrated chips can be employed in high-speed POF-based Fast Ethernet systems for broadband access network applications.
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